• Part: IXFH88N30P
  • Description: Polar HiPerFET Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 165.89 KB
Download IXFH88N30P Datasheet PDF
IXYS
IXFH88N30P
Features z z z z z D = Drain Tab = Drain 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247&TO-264) TO-268 TO-247 TO-264 300 260 1.13/10 4 6 10 International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 4m A VGS = ± 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C VGS = 10V, ID = 0.5 - ID25, Note 1 Characteristic Values Min. Typ. Max. 300 2.5 5.0 V V ±100 n A 25 μA 250 μA 40 mΩ z High Power Density Easy to Mount Space Savings Applications z z DC-DC Coverters Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications DS99216F(11/09) © 2009 IXYS CORPORATION, All Rights Reserved IXFT88N30P IXFH88N30P IXFK88N30P Symbol Test Conditions (TJ =...